By Peter W. Hawkes (Ed.)

ISBN-10: 012014672X

ISBN-13: 9780120146727

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Additional resources for Advances in Electronics and Electron Physics, Vol. 72

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DELALANDE, Y. GULDNER A N D P. 14. The thick parabola in the upper figure is the apparent conduction band edge profile experienced by the carrier. display energy levels which are sensitive to a given parameter, for instance the band offset. Two band edge profiles have successfully been designed to achieve a better sensitivity to the band offset in GaAs-Ga, -,Al,As quantum wells. Their conduction band edge profiles are shown in Fig. 14. The reason why non rectangular quantum wells are better suited than the rectangular ones to extract the value of, say the conduction band offset out of optical measurements of energy levels can simply be found by using qualitative reasoning.

The characteristic features of the r,-related superlattice states (shown in Fig. 6 for GaAs-Ga,,,Al,,,As) are qualitatively the same as the heavy hole ones, except that the lighter r, mass, which favors tunnelling, leads to larger bandwidth upon the barrier thickness L , is very well obeyed, at least for the ground (El) subband. Figure 7 demonstrates that the bandwidths are quite As shown in Fig. 7, the exponential decay law of the superlattice bandwidth upon the barrier thickness L , is very well obeyed, at least for the ground ( E l ) subband.

E. these 8,’s are virtual bound states. They often have lifetimes which are so long that they behave, for all practical purposes, as true bound states. , 1985a; Austin and Jaros, 1985; Singh, 1986) have recently discussed the widths and positions of the resonant states of a quantum well tilted by an external electric field. , 1983). AI,As single or multiple quantum wells. Thus from now on we shall only discuss these cases. e. In Eqs. (75-77), E:”, HH\”, LH\” are the ground state confinement energies for electron, heavy hole and light hole respectively while m,, mhh and mlhare the corresponding effective masses.

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Advances in Electronics and Electron Physics, Vol. 72 by Peter W. Hawkes (Ed.)


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